Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities
Identifieur interne : 013A52 ( Main/Repository ); précédent : 013A51; suivant : 013A53Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities
Auteurs : RBID : Pascal:99-0461610Descripteurs français
- Pascal (Inist)
- 4255S, 4260D, 7866F, 8165C, 4260B, 7855C, 8540H, Etude expérimentale, Indium nitrure, Gallium nitrure, Anneau, Optique non linéaire, Résonateur cavité, Indice réfraction, Laser semiconducteur, Indium composé, Gallium composé, Laser puits quantique, Semiconducteur bande interdite large, Semiconducteur III-V, Photolithographie, Gravure pulvérisation, Mode laser, Puits quantique semiconducteur, Réseau laser semiconducteur.
English descriptors
- KwdEn :
- Cavity resonators, Experimental study, Gallium compounds, Gallium nitrides, III-V semiconductors, Indium compounds, Indium nitrides, Laser modes, Nonlinear optics, Photolithography, Quantum well lasers, Refractive index, Rings, Semiconductor laser arrays, Semiconductor lasers, Semiconductor quantum wells, Sputter etching, Wide band gap semiconductors, microcavity lasers.
Abstract
Microrings of varying sizes have been fabricated from InxGa1-xN/GaN (x∼0.15) multiple quantum wells (MQWs). Photolithography and dry etching techniques including both ion-beam and inductively coupled plasma etching were employed to pattern the III-nitride MQW microrings. Individual microrings were optically pumped and optical resonance modes were observed. The observed mode spacings were consistent with those expected for whispering-gallery (WG) modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the rings under investigation. The results obtained from the microring cavities were compared with those of the III-nitride MQW microdisk cavities. Our results have indicated that resonance modes corresponding to the radial and the WG modes are simultaneously present in microdisk cavities, but only WG modes are available from the microring cavities. Implications of our results on future GaN-based microcavity light emitters have been discussed. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities</title><author><name sortKey="Zeng, K C" uniqKey="Zeng K">K. C. Zeng</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Dai, L" uniqKey="Dai L">L. Dai</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0461610</idno><date when="1999-10-25">1999-10-25</date><idno type="stanalyst">PASCAL 99-0461610 AIP</idno><idno type="RBID">Pascal:99-0461610</idno><idno type="wicri:Area/Main/Corpus">014417</idno><idno type="wicri:Area/Main/Repository">013A52</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cavity resonators</term><term>Experimental study</term><term>Gallium compounds</term><term>Gallium nitrides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Indium nitrides</term><term>Laser modes</term><term>Nonlinear optics</term><term>Photolithography</term><term>Quantum well lasers</term><term>Refractive index</term><term>Rings</term><term>Semiconductor laser arrays</term><term>Semiconductor lasers</term><term>Semiconductor quantum wells</term><term>Sputter etching</term><term>Wide band gap semiconductors</term><term>microcavity lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255S</term><term>4260D</term><term>7866F</term><term>8165C</term><term>4260B</term><term>7855C</term><term>8540H</term><term>Etude expérimentale</term><term>Indium nitrure</term><term>Gallium nitrure</term><term>Anneau</term><term>Optique non linéaire</term><term>Résonateur cavité</term><term>Indice réfraction</term><term>Laser semiconducteur</term><term>Indium composé</term><term>Gallium composé</term><term>Laser puits quantique</term><term>Semiconducteur bande interdite large</term><term>Semiconducteur III-V</term><term>Photolithographie</term><term>Gravure pulvérisation</term><term>Mode laser</term><term>Puits quantique semiconducteur</term><term>Réseau laser semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Microrings of varying sizes have been fabricated from In<sub>x</sub>Ga<sub>1-x</sub>N/GaN (x∼0.15) multiple quantum wells (MQWs). Photolithography and dry etching techniques including both ion-beam and inductively coupled plasma etching were employed to pattern the III-nitride MQW microrings. Individual microrings were optically pumped and optical resonance modes were observed. The observed mode spacings were consistent with those expected for whispering-gallery (WG) modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the rings under investigation. The results obtained from the microring cavities were compared with those of the III-nitride MQW microdisk cavities. Our results have indicated that resonance modes corresponding to the radial and the WG modes are simultaneously present in microdisk cavities, but only WG modes are available from the microring cavities. Implications of our results on future GaN-based microcavity light emitters have been discussed. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>75</s2></fA05><fA06><s2>17</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities</s1></fA08><fA11 i1="01" i2="1"><s1>ZENG (K. C.)</s1></fA11><fA11 i1="02" i2="1"><s1>DAI (L.)</s1></fA11><fA11 i1="03" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA20><s1>2563-2565</s1></fA20><fA21><s1>1999-10-25</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0461610</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Microrings of varying sizes have been fabricated from In<sub>x</sub>Ga<sub>1-x</sub>N/GaN (x∼0.15) multiple quantum wells (MQWs). Photolithography and dry etching techniques including both ion-beam and inductively coupled plasma etching were employed to pattern the III-nitride MQW microrings. Individual microrings were optically pumped and optical resonance modes were observed. The observed mode spacings were consistent with those expected for whispering-gallery (WG) modes within a resonant cavity of cylindrical symmetry, refractive index, and dimensions of the rings under investigation. The results obtained from the microring cavities were compared with those of the III-nitride MQW microdisk cavities. Our results have indicated that resonance modes corresponding to the radial and the WG modes are simultaneously present in microdisk cavities, but only WG modes are available from the microring cavities. 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